2014年11月20日（周四）下午16：00，量子物质科学协同创新中心清华分中心seminar：

报告题目： The Developing Status and Challenge for Non-volatile Memory 报告人：刘明研究员中国科学院微电子研究所报告时间： 2014-11-20 16:00 报告地点：清华大学理科楼郑裕彤大讲堂摘要： As the semiconductor device continues scaling down, conventional Flash memory is facing more and more bottlenecks and will be very difficult to go through 16 nm node. According to the white paper of ITRS 2011, STT-MRAM and RRAM are thought as the most promising technologies among various emerging non-volatile memory concepts, and are worthy to put additional focuses on research and development to accelerate the progress toward commercialization. In this talk, semiconductor memory will be summarized, especially focus on flash memory. Then, a brief introduction on RRAM technology will be given and its opportunities & challenges will be discussed. Lastly, research works of RRAM in IMECAS will be introduced. 个人简历：刘明，中国科学院微电子研究所研究员，研究方向：纳米加工和新型存储器技术。973首席科学家、国家杰出青年基金获得者和基金委创新群体负责人、入选“2013年国家百千万人才工程”。发表SCI收录论文150余篇, SCI引用超过2000次，3篇论文入选 High cited paper (Top 1%)。获得2013年国家发明二等奖（排名第一）、2007年国家发明二等奖（排名第二）和2012年真空科技成就奖等奖项。